[G] Semiconductors/ Terahertz Light

[220] Electrical properties study of Si-doped GeTe

*SHIN　YOUNG KANG¹, Kim Mihyeon¹, Shuang Yi^1,2, Ando Daisuke¹, Yuji Sutou¹ (1. Tohoku Univ., 2. Tohoku Univ. (AIMR))

Keywords:Phase change materials、GeTe、In-memory computing

In this study, we found that Si-doped GeTe affects the crystalline structure of GeTe during crystallization and that resistance decreases gradually with temperature.