[19a-P7-1~14] 14.3 Electron devices and Process technology

[19a-P7-10] Effect of Annealing on Contact Properties with TiSi₂ Electrodes on AlGaN/GaN

^○Mari Okamoto¹, Yoshihiro Matsukawa¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hiroshi Iwai¹, Hitoshi Wakabayashi², Kazuo Tsutsui¹, Wataru Saito³, Kenji Natori¹ (Tokyo Tech.FRC¹, IGSSE², Toshiba corp³)

Keywords:AlGaN GaN specific contact