[27p-G4-1~11] Recent progress of evaluation of surfaces and interfaces in GaN-based materials --As an approach starting from material physics for device improvement

[27p-G4-10] △Insulating properties of Al₂O₃ for GaN MIS gate insulator by plasma-assisted atomic layer deposition

^○Koji Yoshitsugu¹, Masahiro Horita^1,2, Yasuaki Ishikawa^1,2, Yukiharu Uraoka^1,2 (NAIST¹, JST-CREST²)

Keywords:原子層堆積法、GaN MIS capacitor、high-kゲート絶縁膜