The 60th JSAP Spring Meeting,2013

Presentation information

Print

Regular sessions(Oral presentation)

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[28a-G21-1~11] 15.4 III-V-group nitride crystals

Thu. Mar 28, 2013 9:00 AM - 12:00 PM G21 (B5 4F-2405)

[28a-G21-4] △Improvement on Flatness of GaN by Flow Modulation on Hydride Vapor Phase Epitaxy

○Keisuke Yamane1, Narihito Okada1, Kazuyuki Tadatomo1 (Grad. School of Sci. & Eng., Yamaguchi Univ.1)

Keywords:GaN、HVPE、Substrate