[28p-G11-1~18] 14.3 電子デバイス・プロセス技術

[28p-G11-16] ▲Oxide Thickness Dependency on Threshold Voltage of GaN MOSFETs on AlGaN/GaN Heterostructure (6:00 PM ～ 6:15 PM)

^○(D)Qingpeng Wang^1,2，Ying Jiang^1,2，Kentaro Tamai¹，Takahiro Miyashita³，Shin-ichi Motoyama³，Dejun Wang²，Jin-Ping Ao¹，Yasuo Ohno¹ (The Univ. of Tokushima¹，Dalian Univ. of Tech.²，SAMCO Inc.³)

キーワード：GaN MOSFETs、thickness dependency、threshold voltage