[28p-G8-1~14] 13.2 半導体表面

[28p-G8-6] ▲Investigation of Si surface roughness on 3-D MOS capacitor with ultrathin HfON gate insulator formed by ECR plasma sputtering (2:15 PM ～ 2:30 PM)

^○韓大熙，大見俊一郎 (東工大)

キーワード：surface roughness