[29a-G21-1~11] 15.4 III-V-group nitride crystals

[29a-G21-10] △Correlation between Dislocation in GaN Epitaxial Layer and Mechanical Wafer Dicing Process

^○Hideyuki Taguchi^1,2, Amane Kitahara¹, Shugo Miyake¹, Akimitsu Nakaue¹, Yasufumi Fujiwara² (Kobelco research institute, inc.¹, Osaka Univ.²)

Keywords:GaN、転位、ダイシング