9:00 AM - 9:15 AM

[17a-A17-1] Unsteady thermodynamic analysis of the polytype stability in PVT growth of SiC using 2D nucleation theory

^○(M2)Seido Araki¹, Bing Gao², Satoshi Nakano², Shin-ichi Nishizawa³, Koichi Kakimoto^1,2 (Kyushu Univ.¹, RIAM, Kyushu Univ.², AIST³)

9:15 AM - 9:30 AM

[17a-A17-2] Suppression mechanism of polytype transformation during high-quality 4H-SiC growth

^○Shunta Harada¹, Yuji Yamamoto¹, Kenta Murayama¹, Kenta Aoyagi¹, Takenobu Sakai¹, Miho Tagawa¹, Toru Ujihara¹ (Nagoya Univ.¹)

9:30 AM - 9:45 AM

▲ [17a-A17-3] The investigation of step structure with different TSDs conversion behavior during 4H-SiC solution growth

^○Shiyu Xiao¹, Natsumi Hara¹, Shunta Harada¹, Toru Ujihara¹ (Nagoya University¹)

9:45 AM - 10:00 AM

△ [17a-A17-4] Influence of seed crystal shape on surface morphology and threading screw dislocation conversion during solution growth of SiC

^○Daiki Koike¹, Tomonori Umezaki¹, Shunta Harada¹, Miho Tagawa¹, Takenobu Sakai¹, Toru Ujihara¹ (Nagoya Univ.¹)

10:00 AM - 10:15 AM

[17a-A17-5] Epitaxial growth on 4H-SiC substrates grown by solution growth technique

^○Akinori Seki¹, Katsunori Danno¹, Hironori Daikoku¹, Takayuki Shirai¹, Kazuaki Satoh¹, Takeshi Bessho¹ (Toyota Motor Corp.¹)

10:15 AM - 10:30 AM

[17a-A17-6] Diffusion mechanisms of transition metals in 4H-SiC

^○Katsunori Danno¹, Akinori Seki¹, Makoto Saito¹, Takayuki Shirai¹, Hiroshi Suzuki¹, Hidemitsu Sakamoto¹, Kazuaki Sato¹, Takeshi Bessho¹, Tsunenobu Kimoto² (Toyota Motor Corp.¹, Kyoto Univ.²)

10:30 AM - 10:45 AM

[17a-A17-7] Characterization of transition metals in 4H-SiC epilayers on substrates fabricated by solution growth

^○Katsunori Danno¹, Akinori Seki¹, Makoto Saito¹, Takayuki Shirai¹, Hiroshi Suzuki¹, Hidemitsu Sakamoto¹, Kazuaki Sato¹, Takeshi Bessho¹, Tsunenobu Kimoto² (Toyota Motor Corp.¹, Kyoto Univ.²)

Break 10:45～11:00 (10:45 AM - 11:00 AM)

11:00 AM - 11:15 AM

△ [17a-A17-8] Reduction of stacking fault density in growth of 1° off-angle 4H-SiC Si-face epitaxial layers

^○Keiko Masumoto^1,2, Hirokuni Asamizu^1,3, Kentaro Tamura^1,3, Chiaki Kudou^1,4, Johji Nishio^1,5, Kazutoshi Kojima^1,2, Toshiyuki Ohno^1,6, Hajime Okumura^1,2 (FUPET¹, AIST², ROHM³, Panasonic⁴, Toshiba⁵, Hitachi⁶)

11:15 AM - 11:30 AM

[17a-A17-9] Reduction of surface defects of epitaxial layer grown on 2°-off Si-face 4H-SiC

^○Hirokuni Asamizu^1,2, Chiaki Kudou^1,3, Sachiko Ito^1,4, Keiko Masumoto^1,4, Johji Nisio^1,5, Kentaro Tamura^1,2, Kojima Kazutoshi^1,4, Toshiyuki Ohno^1,6 (FUPET¹, Rohm Co., Ltd.², Panasonic Corp.³, AIST⁴, Toshiba Corp.⁵, Hitachi Ltd.⁶)

11:30 AM - 11:45 AM

[17a-A17-10] Uniformity improvement in carrier concentration on 150 mm diameter C-face epitaxy of 4H-SiC

^○Johji Nishio^1,2, Hirokuni Asamizu^1,3, Chiaki Kudou^1,4, Sachiko Ito⁵, Keiko Masumoto^1,5, Kentaro Tamura^1,3, Kazutoshi Kojima^1,5, Toshiyuki Ohno^1,6 (FUPET¹, Toshiba², ROHM³, Panasonic⁴, AIST⁵, Hitachi⁶)

11:45 AM - 12:00 PM

[17a-A17-11] Effective C/Si ratio changes in SiC epitaxial film growth using a horizontal CVD

^○Chiaki Kudou^1,2, Keiko Masumoto^1,5, Hirokuni Asamizu^1,3, Kentaro Tamura^1,3, Johji Nishio^1,4, Kazutoshi Kojima^1,5, Toshiyuki Ohno^1,6 (FUPET¹, Panasonic², ROHM³, Toshiba⁴, AIST⁵, Hitachi⁶)

12:00 PM - 12:15 PM

[17a-A17-12] Periodic surface nanostructures on SiC(0001) with different vicinal angles.

^○Kouhei Fukuma¹, Satosi Hanaki¹, Kajiwara Takashi¹, Anton Visikovskiy¹, Satoru Tanaka¹ (Kyushu Univ.¹)

12:15 PM - 12:30 PM

[17a-A17-13] SiC Heteroepitaxial Growth on AlN/Si by Pulsed Laser Deposition

^○Kazuki Meguro¹, Tsugutada Narita¹, Toshihiro Uemura¹, Hideki Nakazawa¹ (Hirosaki Univ.¹)

Session information

[17a-A17-1~13] 15.6 IV-group-based compounds