Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[18a-A22-1~12] 14.3 Electron devices and Process technology

Thu. Sep 18, 2014 9:00 AM - 12:15 PM A22 (E314)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[18a-A22-1] Investigation of reactivation mechanism of Si donors deactivated by plasma-induced defects in n-GaN

^○Hiroki Yokoyama¹, Seiji Nakamura¹, Tsugunori Okumura¹ (Tokyo Metropolitan Univ.¹)

9:15 AM - 9:30 AM

[18a-A22-2] Mapping of Ni/n-SiC Schottky contacts using internal photoemission microscopy

^○Yuhei Kihara¹, shingo Yamamoto¹, Kenji Shiojima¹ (Univ. of Fukui¹)

9:30 AM - 9:45 AM

△ [18a-A22-3] Mapping of crystalline of n-GaN Schottky contacts using scanning internal photoemission microscopy --influence of surface structure--

^○Shingo Yamamoto¹, Yuhei Kihara¹, Kenji Shiojima¹ (Univ. of Fukui¹)

9:45 AM - 10:00 AM

[18a-A22-4] Temperature Dependence of TiN-Anode GaN Schottky Barrier Diode Characteristic for Microwave Power Rectification

^○Ryota Fujihara¹, Yuki Itai¹, Qiang Liu¹, Liuan Li¹, Yasuo Ohno², Jin-Ping Ao¹ (Tokushima Univ.¹, e-Device Inc.²)

10:00 AM - 10:15 AM

[18a-A22-5] Relative Importance of Interface-Roughness Scattering and Alloy-Disorder Scattering in AlGaN/GaN HEMTs

^○Yoshihiro Akiyama¹, Ryosuke Niwa¹, Hiroyuki Sakaki¹ (Toyota Technol. Inst.¹)

10:15 AM - 10:30 AM

[18a-A22-6] Evaluation of interface states between SiN and AlGaN by X-ray photoelectron spectroscopy under bias voltages

^○Tomohito Kawashima¹, Reiko Saito¹, Hidehiko Yabuhara¹ (Toshiba Corporate Manufacturing Engineering Center¹)

Break 10:30～10:45 (10:30 AM - 10:45 AM)

10:45 AM - 11:00 AM

[18a-A22-7] Estimation of active energy during electron capture process in AlGaN/GaN HEMT

^○Tomotaka Narita¹, Yuki Katayama¹, Akio Wakejima¹, Takashi Egawa¹ (Nagoya Inst. of Tech.¹)

11:00 AM - 11:15 AM

[18a-A22-8] Improved Current Collapse in AlGaN/GaN HEMTs by O2 Plasma Treatment

^○Yoshiki Sakaida¹, Hirokuni Tokuda¹, Masaaki Kuzuhara¹ (Graduate School of Engineering, University of Fukui¹)

11:15 AM - 11:30 AM

[18a-A22-9] Current Collapse Suppression in AlGaN/GaN HEMTs by High Pressure Water Vapor Annealing

^○Kobayashi Yohei¹, Yoshitsugu Koji², Tokuda Hirokuni¹, Horita Masahiro², Uraoka Yukiharu², Kuzuhara Masaaki¹ (Graduate School of Engineering University of Fukui¹, Nara Institute of Science and Technology²)

11:30 AM - 11:45 AM

[18a-A22-10] Comparison of current collapse characteristics on AlGaN/GaN HEMT with Al2O3 passivation

^○Chihoko Mizue¹, Hiroyuki Ichikawa¹, Kazutaka Inoue¹ (SEI, TDL¹)

11:45 AM - 12:00 PM

[18a-A22-11] Influence of SiN_x, SiO₂ passivation layer to AlGaN/GaN structure

^○Akira Miyawaki¹, Mari Okamoto¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Wataru Saito³, Hiromichi Ohashi¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, IGSSE², Toshiba corp.1³)

12:00 PM - 12:15 PM

[18a-A22-12] Reforming mechanism for ALD-Al₂O₃/GaN structure by high pressure water vapor annealing

^○Koji Yoshitsugu¹, Masahiro Horita¹, Urakawa Satoshi¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (NAIST¹)

Session information

[18a-A22-1~12] 14.3 Electron devices and Process technology

△ [18a-A22-3] Mapping of crystalline of n-GaN Schottky contacts using scanning internal photoemission microscopy --influence of surface structure--