Oral presentation

Joint Session K "Wide bandgap oxide semiconductor materials and devices" » Nanocarbon Technology

[19p-A12-1~16] Nanocarbon Technology

Fri. Sep 19, 2014 1:15 PM - 5:45 PM A12 (E301)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 11:45～13:15 (11:45 AM - 1:15 PM)

1:15 PM - 1:45 PM

[19p-A12-1] [JSAP Paper Award Speech]（30min.）
High-Efficiency Cu₂O-Based Heterojunction Solar Cells Fabricated Using a Ga₂O₃ Thin Film as N-Type Layer

Tadatsugu Minami, ^○Yuki Nishi, and Toshihiro Miyata (Kanazawa Institute of Technology)

1:45 PM - 2:00 PM

[19p-A12-2] AP-MOCVD deposition of Cu2O films using bis(2,4-pentanedionato)copper(II) as precursor

^○Mizuki Teramura¹, Kai Taniguchi¹, Hiroyasu Ishikawa¹ (Shibaura Inst. of Tech¹)

2:00 PM - 2:15 PM

[19p-A12-3] Crystal structure analysis of alpha-MoO₃ epitaxial thin film on c-Sapphire substrate using X-ray Reciprocal Space Mapping technique

^○Katsuhiko Inaba¹, Shintaro Kobayashi¹, Shinji Yagi², Masayuki Matsuo², Kazuto Koike², Yoshiyuki Harada², Shigehiko Sasa², Mitsuaki Yano² (Rigaku Corp.¹, Osaka Inst. of Tech.²)

2:15 PM - 2:30 PM

△ [19p-A12-4] Molecular beam epitaxial growth of tungsten trioxide films on a sapphire substrate

^○(M2)Shinji Yagi¹, Masayuki Matsuo¹, Kazuto Koike¹, Yoshiyuki Harada¹, Shigehiko Sasa¹, Mitsuaki Yano¹, Katsuhiko Inaba² (Osaka Inst. of Tech., NMRC¹, Rigaku Corp., X-Ray Res. Lab.²)

2:30 PM - 2:45 PM

[19p-A12-5] Growth of corundum-type In₂O₃ thin films with Ga₂O₃ buffer layers by mist CVD method

^○(B)Yuta Suwa¹, Toshiyuki Kawaharamura¹ (System Engineering, Kochi Univ. of Tech¹)

2:45 PM - 3:00 PM

[19p-A12-6] Considerations of the origin of n-type conductivity in α-In₂O₃ thin films

^○Masashi Kitajima¹, Norihiro Suzuki¹, Kentaro Kaneko¹, Shizuo Fujita¹ (Dept. Electron. Sci. and Eng., Kyoto Univ.¹)

3:00 PM - 3:15 PM

△ [19p-A12-7] Evaluation of electrical properties of α-(In_xGa_1-x)₂O₃ thin films

^○Yoshito Ito¹, Masashi Kitajima¹, Norihiro Suzuki¹, Kentaro Kaneko¹, Shizuo Fujita¹ (Dept. electron. Sci. & Eng., Kyoto Univ.¹)

3:15 PM - 3:30 PM

[19p-A12-8] Thermodynamic Analysis of β-Ga₂O₃ Growth by Halide Vapor Phase Epitaxy

^○(D)Kazushiro Nomura¹, Ken Goto², Rie Togashi¹, Hisashi Murakami¹, Yoshinao Kumagai¹, Akito Kuramata², Shigenobu Yamakoshi², Akinori Koukitu¹ (Tokyo Univ. of Agri. and Tech.¹, Tamura Corporation²)

Break 15:30～15:45 (3:30 PM - 3:45 PM)

3:45 PM - 4:00 PM

△ [19p-A12-9] Synchrotron X-Ray Topography Observation of (-201) and (010) β-Ga₂O₃ Single Crystal

^○(M1)Satoshi Masuya¹, Ryuichi Murakami¹, Kimiyoshi Koshi², Akito Kuramata², Kazuyuki IIzuka², Makoto Kasu¹ (Saga Univ.¹, Tamura Corp.²)

4:00 PM - 4:15 PM

[19p-A12-10] Evaluation of Crystal Defect in β-Ga2O3 Crystal

^○Tetsuya Nagai¹, Kengo Noami¹, Katsuhiko Nakai¹, Toshiro Futagi¹ (NIPPON STEEL & SUMIKIN Technology¹)

4:15 PM - 4:30 PM

[19p-A12-11] Formation of β-Ga₂O₃ films by atmospheric pressure plasma enhanced CVD II

^○(M1)Takuya Kiguchi¹, Yukinori Nose¹, Thuyoshi Uehara², Norifumi Fujimura¹ (Osaka Pref.Univ.¹, Sekisui Integrated Research Inc.²)

4:30 PM - 4:45 PM

[19p-A12-12] Crystal structures of Ga₂O₃ dependent on substrates and gases during sputtering

^○Housei Akazawa¹ (NTT MI Labs.¹)

4:45 PM - 5:00 PM

[19p-A12-13] XPS analysis of corundum-structured Sn doped and non-doped α-(Al_1-xGa_x)₂O₃ thin films

^○Kenta Suzuki¹, Kentaro Kaneko¹, Yoshito Ito¹, Kazuaki Akaiwa¹, Shizuo Fujita¹ (Dept. Electron. Sci. and Eng., Kyoto Univ.¹)

5:00 PM - 5:15 PM

[19p-A12-14] Growth of conductive γ-Ga2O3 films

Keitarou Matsuyama¹, ^○Takayoshi Oshima¹, Kohei Yoshimatsu¹, Akira Ohtomo^1,2 (Graduate School of Sci. & Eng., Tokyo Tech¹, MCES, Tokyo Tech²)

5:15 PM - 5:30 PM

△ [19p-A12-15] First principle calculation of wurtzite β-CuGaO2 and β-AgGaO2

^○(DC)Issei Suzuki¹, Hiraku Nagatani¹, Masao Kita², Yuuki Iguchi³, Chiyuki Sato³, Hiroshi Yanagi³, Naoki Ohashi⁴, Takahisa Omata¹ (Osaka University¹, Toyama National College of Technology², Yamanashi University³, NIMS⁴)

5:30 PM - 5:45 PM

[19p-A12-16] Deep Ultraviolet Photodiodes based on beta-Ga₂O₃ / SiC Heterojunction

^○Shinji Nakagomi¹, Keisuke Hiratsuka¹, Yoshihiro Kokubun¹ (Ishinomaki Senshu Univ.¹)