[18a-A24-1~13] 14.4 光物性・発光デバイス

▲ [18a-A24-2] Growth and Characterization of Eu-Doped GaN by Low-Temperature Organometallic Vapor Phase Epitaxy

^○朱婉新，Timmerman Dolf，小泉淳，藤原康文 (阪大院工)

キーワード：Eu-Doped GaN