[18p-A12-1~16] 合同セッションＫ ワイドギャップ酸化物半導体材料・デバイス

▼ [18p-A12-6] Suppression of hump effect in a-InGaZnO thin-film transistors passivated by novel photosensitive passivation layer

^〇（DC）Juan Paolo Bermundo¹，Yasuaki Ishikawa¹，Haruka Yamazaki¹，Kulchaisit Chaiyanan¹，Mami Fujii¹，Toshiaki Nonaka²，Yukiharu Uraoka¹ (NAIST¹，AZ Electronic Materials²)

キーワード：InGaZnO reliability,Polysilsesquioxane,passivation