Fabrication and characterization of BaSi<sub>2</sub> epitaxial films on Ge(111) substrate by MBE

Ryota Takabe

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[19p-A27-1~17] 14.1 Physical properties of exploratory materials

Fri. Sep 19, 2014 2:00 PM - 6:45 PM A27 (N302)

2:00 PM - 2:15 PM

[19p-A27-1] Fabrication and characterization of BaSi₂ epitaxial films on Ge(111) substrate by MBE

^○Ryota Takabe¹, Masakazu Baba¹, Weijie Du¹, Kaoru Toko¹, Kosuke Hara², Noritaka Usami^2,3, Takashi Suemasu^1,3 (Univ. Tsukuba¹, Nagoya Univ.², JST-CREST³)

Keywords:太陽電池,半導体

« Previous in this session
Next in this session »

▲

Presentation information

[19p-A27-1~17] 14.1 Physical properties of exploratory materials

[19p-A27-1] Fabrication and characterization of BaSi2 epitaxial films on Ge(111) substrate by MBE

[19p-A27-1] Fabrication and characterization of BaSi₂ epitaxial films on Ge(111) substrate by MBE