[18p-E1-1~14] Developments and Challenges for Resistance Change Memories Technology (抵抗変化メモリ技術の発展及び課題）

▲ [18p-E1-2] Observation of ReRAM switching by means of TEM/STM (30 min.)

^○Masashi Arita，Yasuo Takahashi (北大情報)

キーワード：Resitive RAM,solid electrolyte,in-situ TEM