Fabrication of Three-Dimensional Integrated Circuits by using Au/SiO<sub>2</sub> Hybrid Bonding

Masahide Goto

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.3 Si Process・Interconnect・MEMS・Integration

[18p-E14-1~21] 13.3 Si Process・Interconnect・MEMS・Integration

Tue. Mar 18, 2014 1:15 PM - 6:45 PM E14 (E302)

2:15 PM - 2:30 PM

[18p-E14-5] Fabrication of Three-Dimensional Integrated Circuits by using Au/SiO₂ Hybrid Bonding

^○Masahide Goto¹, Kei Hagiwara¹, Yoshinori Iguchi¹, Hiroshi Ohtake¹, Takuya Saraya², Eiji Higurashi², Hiroshi Toshiyoshi², Toshiro Hiramoto² (NHK STRL¹, Univ. of Tokyo²)

Keywords:３次元集積回路,接合,撮像デバイス

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Presentation information

[18p-E14-1~21] 13.3 Si Process・Interconnect・MEMS・Integration

[18p-E14-5] Fabrication of Three-Dimensional Integrated Circuits by using Au/SiO2 Hybrid Bonding

[18p-E14-5] Fabrication of Three-Dimensional Integrated Circuits by using Au/SiO₂ Hybrid Bonding