[19a-E14-1~10] 13.3 Si Process・Interconnect・MEMS・Integration

[19a-E14-10] Characterization of nMOSFET and MOS-capacitor Fabricated by Minimal Fab and Mega Fab Hybrid Process

^○Sommawan Khumpuang^1,2, Masayoshi Nagao¹, Takashi Matsukawa¹, Kazuhiko Endo¹, Meishoku Masahara¹, Shiro Hara^1,2 (AIST¹, MINIMAL²)

Keywords:MOSFET,ハーフインチウェハ,ミニマルファブ