Impact of T-gate Stem Height on Parasitic Gate Delay Time in InGaAs-HEMTs

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

Thu. Mar 20, 2014 9:00 AM - 12:00 PM D8 (D215)

11:30 AM - 11:45 AM

^○Tomohiro Yoshida¹, Kengo Kobayashi¹, Shinya Hatakeyama¹, Taiichi Otsuji¹, Tetsuya Suemitsu¹ (RIEC, Tohoku Univ.¹)

Keywords:InGaAs-HEMT,遅延時間解析