Fabrication and Characterization of the charge trapping type FinFET flash memories with a high-k Al2O3 blocking layer

Yongxun Liu

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.4 Devices/Integration Technologies

[20a-F12-1~13] 13.4 Devices/Integration Technologies

Thu. Mar 20, 2014 9:00 AM - 12:30 PM F12 (F408)

9:00 AM - 9:15 AM

[20a-F12-1] Fabrication and Characterization of the charge trapping type FinFET flash memories with a high-k Al2O3 blocking layer

^○Yongxun Liu¹, Toshihide Nabatame², Takashi Matsukawa¹, Kazuhiko Endo¹, Shinichi Ouchi¹, Jyunichi Tsukada¹, Hiromi Yamauchi¹, Yuki Ishikawa¹, Wataru Mizubayashi¹, Yukinori Morita¹, Shinji Migita¹, Hiroyuki Ota¹, Toshihiro Chikiyow², Meishoku Masahara¹ (AIST¹, NIMS²)

Keywords:Flash memory,FinFET,MANOS