〇(D)Yujin Cho^1,2, Daiming Tang¹, Benjamin Dierre¹, Kohsei Takahashi¹, Takashi Takeda¹, Naoto Hirosaki¹, Takashi Sekiguchi^1,2 (1.NIMS, 2.Tsukuba Univ.)

15:15 〜 15:30

▲ [16p-2B-7] Facile Synthesis of Nano-scale Ca-a-SiAlON:Eu²⁺ by Laser Ablation in Water

〇(D)HAOHAO WANG¹, Touichirou Tomiya¹, Takashi Takeda², Naoto Hirosaki², Osamu Odawara¹, Hiroyuki Wada¹ (1.Tokyo Tech, 2.NIMS)

15:30 〜 15:45

△ [16p-2B-8] Ba₃Si₆O₁₂N₂:Eu²⁺蛍光体の二波長励起PL測定-BGE強度依存性-

〇高塚洋右¹、李廷廷¹、福田武司¹、本多善太郎¹、鎌田憲彦¹、来島友幸² (1.埼玉大学、2.三菱化学)

15:45 〜 16:00

[16p-2B-9] (Ba_0.99Eu_0.01)Al₃Si₄N₉の合成、結晶構造と発光特性

〇吉村文孝¹、山根久典² (1.三菱化学科技セ、2.東北大多元研)

セッション一覧

13 半導体 » 13.9 光物性・発光デバイス

[13p-PA6-1~17] 13.9 光物性・発光デバイス

▲ [13p-PA6-3] Enhanced Brightness of White Light Emission from Wide-Band-Gap Materials Sensitized by Narrow-Band-Gap Quantum Dots

[14a-2B-1~10] 13.9 光物性・発光デバイス

△ [14a-2B-1] VGF法成長によるSiドープGaAsバルクのスピン緩和の観測

△ [14a-2B-3] Pドーピングによる発光性Si複合微結晶の耐熱性向上

[14p-2B-1~10] 13.9 光物性・発光デバイス

△ [14p-2B-1] 電気化学発光セルの陰極電極が発光特性に与える影響

[16a-2B-1~9] 13.9 光物性・発光デバイス

△ [16a-2B-3] TMAS誘導シリカ包埋によるCuInS2/ZnS量子ドット蛍光体の耐光性の向上

[16p-2B-1~9] 13.9 光物性・発光デバイス

▲ [16p-2B-2] Crystal structure and photoluminescence of an orange Ca1.58Eu0.42Si5O3N6 phosphor discovered by the single-particle-diagnosis approach

▲ [16p-2B-3] Concentration dependency of Eu2+ doped La2.5Ca1.5Si12O4.5N16.5 and the energy levels of the lanthanide ions

▲ [16p-2B-5] Preparation of green-emitting beta-sialon-in-glass for laser lighting

▼ [16p-2B-6] TEM and CL analysis of Si-doped AlN powders

▲ [16p-2B-7] Facile Synthesis of Nano-scale Ca-a-SiAlON:Eu2+ by Laser Ablation in Water

△ [16p-2B-8] Ba3Si6O12N2:Eu2+蛍光体の二波長励起PL測定-BGE強度依存性-

認証

△ [16a-2B-3] TMAS誘導シリカ包埋によるCuInS₂/ZnS量子ドット蛍光体の耐光性の向上

▲ [16p-2B-2] Crystal structure and photoluminescence of an orange Ca_1.58Eu_0.42Si₅O₃N₆phosphor discovered by the single-particle-diagnosis approach

▲ [16p-2B-3] Concentration dependency of Eu²⁺ doped La_2.5Ca_1.5Si₁₂O_4.5N_16.5 and the energy levels of the lanthanide ions

▲ [16p-2B-7] Facile Synthesis of Nano-scale Ca-a-SiAlON:Eu²⁺ by Laser Ablation in Water

△ [16p-2B-8] Ba₃Si₆O₁₂N₂:Eu²⁺蛍光体の二波長励起PL測定-BGE強度依存性-