1:15 PM - 1:30 PM
[13p-1E-1] Infrared absorption measurement of low concentration carbon in Si crystal
(VII) Second-generation technology to measure down to 1x1014 cm−3 concentration and 1x1013 cm−3 concentration difference
Keywords:silicon wafer,Infrared,carbon concentraion
Low-concentration carbon in Si crystal is measured. Artificial reference samples were prepared by electron irradiation to reduce Cs concentraion, by which measurement of about 1E+14 concentration was successfully achieved. Concentration difference of about 1E+13 was also achieved. The authors call the method as the "second-generation technology", which includes not only the artificial reference preparation but also phonon-peak fitting alanysis and sample preparation of various carbon concentration.