[13p-1E-1~17] 15.8 Crystal evaluation, impurities and crystal defects

[13p-1E-8] Study of the vacancy injection mechanism by high-temperature oxidation in Si crystal

〇Kozo Nakamura¹ (1.Okayama Pref. Univ., Local Joint Research Mechanism)

Keywords:oxidation,vacancy

It has been generally thought that self-interstitials becomes super-saturation state by the oxidation. However, there were some experimental results which suggested the vacancy to be super-saturation by high temperature oxidation (>1300 C). I discuss about the mechanism of vacancy-injection by high temperature oxidation using the wet oxidation data by Suezawa et al..