[13p-2F-1~16] 3.7 Laser processing

△ [13p-2F-10] Femtosecond laser-induced strain and low-temperature annealing of Ni/SiC interface

〇Yusuke Takidani¹, Kenta Kondo², Tomoyuki Ueki³, Yasuhiro Tanaka⁴, Takuro Tomita³, Tatsuya Okada³ (1.Grad. student, Tokushima Univ., 2.Research student, Tokushima Univ., 3.Tokushima Univ., 4.Kagawa Univ.)

Keywords:silicon carbide (SiC),femtosecond laser,diffusion

Low-temperature annealing was carried out at 573K or 673K for 60s or 600s, subsequent to the irradiation of femtosecond laser pulses at the Ni/SiC interface. The interlayer between Ni film and SiC substrate was identified as NiSi using TEM/selected area diffraction method. Micro Raman spectroscopy analysis unveiled the existence of graphite at the top surface of Ni film. It is clear that laser-induced strain at the Ni/SiC interface assisted the low-temperature diffusion of C atoms.