2015年 第76回応用物理学会秋季学術講演会

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一般セッション(口頭講演)

9 応用物性 » 9.5 新機能材料・新物性

[13p-2R-1~11] 9.5 新機能材料・新物性

2015年9月13日(日) 13:45 〜 16:45 2R (231-2)

座長:高瀬 浩一(日大),原 嘉昭(茨城高専)

15:15 〜 15:30

[13p-2R-6] Temperature dependence of polarized Raman scattering spectra of TlInS2

〇(DC)PAUCAR RAUL1、Shim YongGu2、Wakita Kazuki1、Alekperov Oktay3、Mamedov Nazim3 (1.Chiba Inst. of Tech.、2.Osaka Pref. Univ.、3.Azerbaijan Inst. of Phys.)

キーワード:Ternary thallium chalcogenide、Raman scattering、Phase transition

TlInS2 belongs to the group of ternary thallium dichalcogenides compounds with chemical formula TlMeX2 (where Me = In or Ga, X = Se, S, or Te). They have both layered (TlInS2, TlGaS2, TlGaSe2) and chain (TlInSe2, TlInTe2, TlGaTe2) structures. These compounds attract particular interest due to high degree of anisotropy in their physical properties and potential applications in optoelectronics as well. In this work, the polarized Raman spectra of layered TlInS2 crystals are reported. The optical phonons which shows strong temperature dependence are identified as interlayer vibrations and are related to the phase transition, while the phonons which show a weak temperature dependence are identified as intralayer vibrations. Furthermore, we present a preliminary assignment of the symmetry modes.