The 76th JSAP Autumn Meeting, 2015

Presentation information

Poster presentation

13 Semiconductors » 13.9 Optical properties and light-emitting devices

[13p-PA6-1~17] 13.9 Optical properties and light-emitting devices

Sun. Sep 13, 2015 4:00 PM - 6:00 PM PA6 (Event Hall)

4:00 PM - 6:00 PM

[13p-PA6-17] Luminescence Process of Nitrogen Delta-doped GaAs Investigated by Photoluminescence Characteristics

〇Akimi Yamane1 (1.Waseda Univ.)

Keywords:N,GaAs,delta dope