[13p-PB6-1~20] 21.1 Joint Session K

[13p-PB6-16] Suppression of excess oxygen for environmentally stable amorphous In-Si-O thin-film transistors

〇Shinya Aikawa^1,2, Nobuhiko Mitoma¹, Takio Kizu¹, Toshihide Nabatame¹, Kazuhito Tsukagoshi¹ (1.NIMS, 2.Kogakuin Univ.)

Keywords:indium oxide-based thin-film transistors,excess oxygen

We discuss the environmental instability of amorphous indium oxide (InO_x)-based thin-film transistors (TFTs) in terms of the excess oxygen in the semiconductor films. A comparison between amorphous InO_x doped with low and high concentrations of oxygen binder (SiO₂) showed that out-diffusion of oxygen molecules causes drastic changes in the film conductivity and TFT turn-on voltages. Incorporation of sufficient SiO₂ could suppress fluctuations in excess oxygen because of the high oxygen bond-dissociation energy and low Gibbs free energy. Consequently, the TFT operation became rather stable. The results would be useful for the design of reliable oxide TFTs with stable electrical properties.