[14a-4D-1~11] 13.7 ナノ構造・量子現象

▲ [14a-4D-2] Fabrication of InGaN/GaN Quantum Nanodisks for LED by Combination of Bio-template and Neutral Beam Etching

〇(D)YICHUN LAI^1,2, Akio Higo², Chang Yong Lee², Cedric Thomas², Takayuki Kiba³, Shula Chen³, Tomoyuki Tanikawa², Shigeyuki Kuboya², Ryuji Katayama², Kanako Shojiki², Peichen Yu¹, Ichiro Yamashita⁴, Akihiro Murayama³, Seiji Samukawa^1,2,5 (1.National Chiao Tung Univ., 2.Tohoku Univ., 3.Hokkaido Univ., 4.NAIST, 5.JST-CREST)

キーワード：InGaN/GaN Quantum Nanodisks,Bio-template,Neutral Beam Etching

Since quantum dots (QDs) are proposed, various growth techniques have been developed and realized QDs lasers, amplifiers, and solar cells applications. QDs are fabricated by the Straski-Krastanow (S-K) epitaxial growth, however, it is very difficult to preciously control the size and thickness independently. We have already proposed combination of bio-template [1] nano-patterning process and ultra-low damage neutral beam etching (NBE) [2,3,4] for realizing QDs by III-V compound materials of GaAs, InGaAs. In this study, we have developed a top-down fabrication process and made InGaN/GaN nano-pillars structure. This method can also be further improved to control the ferritin density by changing the concentration of ammonium acetate (AA) solutions.