The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

15 Crystal Engineering » 15.7 Fundamentals of epitaxy

[14p-2W-11~16] 15.7 Fundamentals of epitaxy

Mon. Sep 14, 2015 4:45 PM - 6:15 PM 2W (234-2(North))

座長:高橋 正光(原子力研究)

6:00 PM - 6:15 PM

[14p-2W-16] Theoretical Basics on Transport Phenomena of Solution Growth

〇Hiromoto Susawa1 (1.Originator of DBR-LED)

Keywords:solid solution,compositional variation,macroscopic approach

Basic equations for ideal conditions of solution growth without convection are confirmed after "...Oyobustsuri hanbook..." in this meeting. Compositions of solid solution are constant under an analytic solution when initial supersaturation is dominant. This theorem forecasts experiment and simulation and becomes a base. Please tell journals treating theory of solution growth because JJAP does not.