[14p-PB2-1~21] 13.8 Compound and power electron devices and process technology

[14p-PB2-14] Temperature dependence of current-voltage characteristics for Ni/low-Mg-doped p-GaN Schottky diodes

〇Toshichika Aoki¹, Kenji Shiojima¹ (1.Univ. of Fukui)

Keywords:p-GaN,Schottky contact,I-V-T