The 76th JSAP Autumn Meeting, 2015

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13 Semiconductors » 13.8 Compound and power electron devices and process technology

[15a-4C-1~13] 13.8 Compound and power electron devices and process technology

Tue. Sep 15, 2015 9:00 AM - 12:30 PM 4C (432)

座長:牧山 剛三(富士通研)

9:45 AM - 10:00 AM

[15a-4C-4] Mapping of n-GaN Schottky contacts degraded by voltage stress

〇Shingo Murase1, Hiroshi Ohta2, Tomoyoshi Mishima2, Kenji Shiojima1 (1.Univ. of Fukui, 2.Hosei Univ.)

Keywords:n-GaN,scanning internal photoemission microscopy