[15p-1C-1~18] 13.5 Semiconductor devices and related technologies

[15p-1C-12] Effect of Atomic Hydrogen Annealing to Poly-Ge TFT

〇Akira Heya¹, Hirano Shota¹, Matsuo Naoto¹ (1.Univ. of Hyogo)

Keywords:poly-Ge,Thin film transistor,Atomic hydrogen annealing

The improvement of poly-Ge TFT by atomic hydrogen annealing (AHA) are investigated for realization of high-performance poly-Ge TFT. As the AHA treatment time increased, the I_d decreased and the V_g dependence of I_d was observed. It is considered that the depletion was occurred by positive V_g. It is found that the defect density in the poly-Ge film and at the poly-Ge/SiO₂ interface can be reduced by AHA slightly.