13:30 〜 13:45
▼ [15p-1C-2] Impact of Random Telegraph Noise (RTN) on Write Stability in Silicon-on-thin-BOX (SOTB) SRAM Cells in Sub-0.4V Regime
キーワード:random telegraph noise,SRAM,low supply voltage
Impact of random telegraph noise (RTN) on write stability of silicon-on-thin-BOX (SOTB) SRAM cells is investigated in sub-0.4V regime. Write N-curve is selected as the metric characterizing SRAM cells' write stability. A statistical model is proposed to calculate impact of RTN on fail bit rate (FBR). It is found that, different from at high VDD, FBR is largely degraded by RTN in sub-0.4V regime and special care is suggested to be taken for RTN in SRAM design.