[15p-1D-1~11] Materials science of singularity in nitride semiconductors -Control and physics on surface and interface-

[15p-1D-11] Control of interface on epitaxy of nitride semiconductors on sapphire substrates

〇Hideto Miyake¹, Kazumasa Hiramatsu² (1.Gr.Sch.RIS Mie Univ., 2.Gr.Sch.Eng Mie Univ.)

Keywords:AlN,epitaxial lateral overgrowth,annealing at high temperature

Facet control during growth of nitride semiconductors is a promising technique to obtain a high-quality epitaxial GaN layer with low threading dislocation (TD) density. We reported facet controlled epitaxial lateral overgrowth (FACELO) technique of GaN was a useful technique to reduce TD density and achieved TD density of the order of 10⁸ cm^-2 .FWHMs of the XRCs of the AlN buffer layers were significantly decreased by annealing at 1700 ^oC in CO-N₂ ambent, and are 15arcsec and 154 arcsec for (0002) and (10-12), respectively.