[16a-1C-1~11] 13.5 デバイス／集積化技術

▲ [16a-1C-1] [Young Scientist Presentation Award Speech] Effects of strain, interface states and back bias on electrical characteristics of Ge-source UTB strained-SOI tunnel FETs

〇Minsoo Kim^1,2, Yuki K. Wakabayashi¹, Ryosho Nakane¹, Masafumi Yokoyama¹, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (1.The Univ. of Tokyo, 2.JST-CREST)

キーワード：Tunnel FET,Ge-source,Strained SOI

The electrical characteristics of Ge/strained-Si hetero-junction TFETs with in-situ B-doped Ge have been studied. It has been found that higher strain in the channel, the optimized PMA process, and the positive back biasing can enhance the electrical properties.