[16a-PA2-1~60] 17 Nanocarbon Technology（Poster）

[16a-PA2-20] Graphene Growth Mechanism by Si Sublimation on SiC Surface Unveiled Through First-Principles Simulations

〇Takahiro Yamasaki^1,4, Yuki Ono^2,4, Jun Nara^1,4, Takahisa Ohno^1,3,4 (1.NIMS, 2.RIST, 3.IIS, Univ. of Tokyo, 4.MARCEED)

Keywords:Graphene,Si sublimation,Carbon chain

We have executed several MD simulations at finite temperatures on systems which contain a (11-2n) facet exposed on the 4H-SiC(0001) terrace and a (11-2n) facet system. After removal of several Si layers, remained C atoms on the facet generate C chains, which intertwine each other and accidentally form C 5- and 6-membered rings. Most of them broken, but some of them grow larger than critical nucleus sizes. C chains are adsorbed in the graphene nuclei and they grow larger.