[16a-PA2-1~60] 17 ナノカーボン（ポスター）

▲ [16a-PA2-4] Influence of post-annealing process on single-walled carbon nanotube growth and its application for biosensing

〇(M2)Tung Nguyen¹, Trong Tue Phan¹, Thi Ngoc Lien Truong², Ohno Yasuhide³, Maehashi Kenzo⁴, Matsumoto Kazuhiko⁵, Takamura Yuzuru¹ (1.Japan Advanced Inst. of Sci. and Tech., 2.Hanoi Univ. of Sci. and Tech., 3.Tokushima Univ., 4.Tokyo Univ. Agr. Tech., 5.Osaka Univ. ISIR)

キーワード：single walled carbon nanotube,field effect transistor,post-annealing process

Single-walled carbon nanotube field-effect transistors (SWCNT FET) are one of the most promising candidates for the development of highly sensitive and label-free biosensors. The quality of SWCNT grown by chemical vapor deposition (CVD) method was reported to be strongly dependent on the CVD conditions (such as temperature, growth time and pressure), catalyst, and carbon source. So far, there are a few studies on the impact of post-annealing process on SWCNT performance. In this study, we investigated the influence of post-annealing process on SWCNT growth.