[11a-C2-1~13] 16.3 シリコン系太陽電池

▲ [11a-C2-12] Defect termination at the interfaces of Cat-CVD SiN_x/c-Si and SiN_x/P Cat-doped layer/c-Si structures

〇(D)Cham Trinh^{1, 2}, Koichi Koyama^{1, 2}, Keisuke Ohdaira^{1, 2}, Hideki Matsumura^{1, 2} (1.JAIST, 2.JST CREST)

キーワード：Silicon nitride (SiNx),surface passivation,Cat-CVD