[11a-C2-1~13] 16.3 シリコン系太陽電池

[11a-C2-13] Improvement in the passivation quality of Cat-CVD a-Si/c-Si hetero-junction interface for Si(111) and Si(100) by the formation of ultra-thin oxide layers

〇(M2)Takafumi Oikawa¹, Keisuke Ohdaira^{1, 2}, Koichi Higashimine^{1, 2}, Hideki Matsumura^{1, 2} (1.JAIST, 2.JST CREST)

キーワード：surface passivation,ultra-thin oxide film