The 62nd JSAP Spring Meeting, 2015

Presentation information

Print

Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[11p-A21-1~12] 13.8 Compound and power electron devices and process technology

Wed. Mar 11, 2015 2:00 PM - 5:15 PM A21 (6A-213)

3:15 PM - 3:30 PM

[11p-A21-6] Recess-Gate AlGaN/GaN HEMT Structure by Neutral Beam Etching

〇ChangYong Lee1, Akio Higo2, Jitsuo Ohta3, Hiroshi Fujioka3, 4, Seiji Samukawa1, 2, 4 (1.IFS, Tohoku Univ., 2.WPI-AIMR, Tohoku Univ., 3.IIS, Univ. of Tokyo, 4.JST-CREST)

Keywords:neutral beam etching