[12a-A23-1~12] 13.6 Semiconductor English Session

▲ [12a-A23-6] Electric-field-assisted formation of an interfacial double-donor molecule in Si nano-transistors

〇(PC)Samanta Arup¹, Daniel Moraru², Takeshi Mizuno¹, Michiharu Tabe¹ (1.RIE, Shizuoka Univ., 2.DEMS, Shizuoka Univ.)

キーワード：Dopant atom transistor,Interface well,Dopant-dopant interaction