[12a-A23-1~12] 13.6 Semiconductor English Session

▼ [12a-A23-7] Inspection of elastic stress and generated defects in thin Ge film on GeOI wafer

〇Toshimitsu Nakamura^{1, 2}, Tomonori Nishimura^{1, 2}, Takeaki Yajima^{1, 2}, Akira Toriumi^{1, 2} (1.Univ. of Tokyo, 2.JST-CREST)

キーワード：germanium,Raman spectroscopy,GeOI