[12p-B1-1~23] 15.4 III-V-group nitride crystals

[12p-B1-15] [Young Scientist Presentation Award Speech] Structural and optical properties of MOVPE-grown N-polar (0001) InGaN multiple quantum wells and light-emitting diodes

〇Kanako Shojiki¹, Jung-Hun Choi¹, Tomoyuki Tanikawa^{1, 2}, Takeshi Kimura^{1, 2}, Shigeyuki Kuboya¹, Takashi Hanada^{1, 2}, Ryuji Katayama^{1, 2}, Takashi Matsuoka^{1, 2} (1.IMR, Tohoku Univ., 2.JST, CREST)

Keywords:Nitride semiconductor,InGaN,LED