5:45 PM - 6:15 PM
[12p-B4-10] Characteristics of Semiconductor Device Necessary for Next Generation Power Electronics Components
Keywords:Power Converter,SiC,GaN
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Symposium
Symposium » Progress of power semiconductors, toward wide band-gap materials beyond silicon
[12p-B4-1~10] Progress of power semiconductors, toward wide band-gap materials beyond silicon
Thu. Mar 12, 2015 1:15 PM - 6:15 PM B4 (6B-104)