[12p-D13-1~14] 6.5 Surface Physics, Vacuum

[12p-D13-3] Development of UHV high resolution Raman spectroscopy in a system to measure Strain Effect on Electronic Structure(SEES)

〇Sakura-Nishino Takeda¹, Haruka Kumeda¹, Kohei Maeda¹, Hiroki Momono¹, Katsuyuki Takeuchi¹, Harushige Nakao¹, Artoni K. R. Ang¹, Tomohiro Sakata¹, Hiroshi Daimon¹ (1.NAIST)

Keywords:Strained Semiconductor,Raman,ARPES