[14a-A27-1~15] 8.4 Plasma etching

△ [14a-A27-14] Emission intensity of fluorine radical in TSV plasma etching reactor for MinimaiFab

〇Taisei Motomura^{1, 2}, Kazunori Takahashi³, Yuji Kasashima¹, Fumihiko Uesugi¹, Akira Ando³, Hisato Ogiso^{1, 2}, Sommawan Khumpuang^{1, 2}, Shiro Hara^{1, 2} (1.AIST, 2.MINIMAL, 3.Tohoku Univ.)

Keywords:MinimalFab,plasma etching,semiconductor