[14a-B4-1~13] 15.6 IV族系化合物

△ [14a-B4-10] Investigation of SiC MOSFETs with 3C/4H Different Poly-Type Junctions

〇Munetaka Noguchi¹, Toshiaki Iwamatsu¹, Naruhisa Miura¹, Shuhei Nakata¹, Satoshi Yamakawa¹ (1.Mitsubishi Electric Corp.)

キーワード：SiC,MOSFET,tunneling