The 62nd JSAP Spring Meeting, 2015

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors

[14a-B4-1~13] 15.6 Group IV Compound Semiconductors

Sat. Mar 14, 2015 9:00 AM - 12:30 PM B4 (6B-104)

9:15 AM - 9:30 AM

△ [14a-B4-2] Anisotropy of Side-etching Rate in Electrochemical Etching of 4H-SiC

〇Naoto Yamashita1, Kosuke Sato2, Tsunenobu Kimoto2, Jun Suda2 (1.Kyoto Univ., 2.Dept. of Electro. Sci. & Eng., Kyoto Univ.)

Keywords:SiC,MEMS,etching