[14a-D4-1~10] 15.3 III-V族エピタキシャル結晶

▼ [14a-D4-1] GaAsBi/GaAs growth on (100) and (411)A GaAs Substrates by Molecular Beam Epitaxy

〇(D)Pallavi Patil¹, Masataka Tatebe¹, Yuh Nabara¹, Koh-ichiroh Higaki¹, Nobutaka Nishi¹, Eric Eugenio², Saburo Tanaka¹, Satoshi Shimomura¹ (1.Ehime University, 2.CIACyT UASLP)

キーワード：MBE,GaAsBi,AFM