The 62nd JSAP Spring Meeting, 2015

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15 Crystal Engineering » 15.3 III-V-group epitaxial crystals

[14p-D4-1~5] 15.3 III-V-group epitaxial crystals

Sat. Mar 14, 2015 1:00 PM - 2:15 PM D4 (16-204)

2:00 PM - 2:15 PM

[14p-D4-5] MBE growth of InAs quantum dots on GaAs substrates patterned through porous aluminum mask

〇Takenori Yamazaki1, Mai Sogame1, Yoshitaka Morishita1 (1.Tokyo Univ. of Agri. & Tech)

Keywords:quantum dot,porous aluminum