The 77th JSAP Autumn Meeting, 2016

Presentation information

Oral presentation

13 Semiconductors » 13.9 Optical properties and light-emitting devices

[13a-A35-1~10] 13.9 Optical properties and light-emitting devices

Tue. Sep 13, 2016 9:00 AM - 11:45 AM A35 (303-304)

Kenji Shinozaki(AIST)

9:30 AM - 9:45 AM

[13a-A35-3] Photoluminescence of ZnGa2O4:Eu3+ films affected by crystallinity and oxidization

Housei Akazawa1, Shinojima Hiroyuki2 (1.NTT DIC, 2.Kurume NCT)

Keywords:zinc oxide, europium 3+ ion, photoluminescence

While ZnGa2O4 is suitable as a host accepting Eu3+ ions at Ga3+ sites, the emissoin yield of Eu3+ ions vary depending on the process condition. Wd have clarified the primary factors affecting the photoluminescence intensity in terms of crystallinity and the degree of oxidization through investigating samples deposited with O2 and H2O gases.