[14p-A21-1~13] Recent Progress of Nitride Semiconductor -Toward Defectless Crystal and Devices-

[14p-A21-2] Prospects of GaN-based Electron Devices

〇Masaaki Kuzuhara¹ (1.Univ. Fukui)

Keywords:nitride semiconductor, electron device, high electron mobility transistor

Nitride semiconductor, represented by GaN, is a wide-bandgap semiconductor with a direct energy-band structure. Because of this unique band structure, it has a lot of attractive properties, such as very high breakdown voltage operation, high-temperature operation, and high-speed and high-frequency opearation utilizing excellent low-field electron mobility. In this talk, prospects of GaN-based electron devices will be discussed by paying special attention to its high breakdown electric field and high electron mobility, which are both important parameters for power device applications.